可以开始使用出(GaN)开发ices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.
现在，GAN设备在电源应用中显示，例如开关模式电源。它们的较低的抗性和更快的切换时间可显着提高效率。
半导体公司还找到了新方法，可以使用标准处理技术在硅碳化物底物以及甚至较低的硅底物上制造gan设备，这当然可以降低总体成本。此外，现在还可以使用增强模式设备，以及原始的耗竭模式高电子摩托车晶体管（HEMT），成为更多产品中设计师的吸引人选择。
While the popularity of GaN devices continue, a critical parallel effort is underway to find and develop a comprehensive methodology to qualify the reliability of GaN products. For rugged military equipment and critical industrial gear, reliability is a key deciding factor in the use of GaN versus legacy silicon devices for any new power product. Here’s what one company is doing about this.
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QA on GaN
Texas Instruments has developed a comprehensive quality program to validate the reliability of its GaN products. After years of developing such programs for silicon devices, engineers are applying the principles they have learned to determine just how long a GaN device will last under a variety of conditions encountered in different use cases.
可靠性和质量通常通过执行标准化测试来确定。可靠性是从在故障模式下收集的测试数据中推断出来的。评估过程的关键部分是使用统计和其他数学方法来预测故障率和寿命等事物。
Designers want to use GaN devices because of their impressive characteristics and features, thereby gaining a competitive advantage in the marketplace. They also want these products to be able to pass the tough testing of the two main standards bodies, which have the last word: the Joint Electron Device Engineering Council (JEDEC) and the Automotive Engineering Council (AEC).
这two groups’ testing procedures for certification usually fall into one of three categories: electrostatic discharge (ESD), device, and package. Texas Instruments has developed a quality program to provide reliable GaN solutions based on GaN fundamentals and the relevant testing.
Critical Design Considerations
GAN电源晶体管现在正在出现在各种电源，逆变器，DC-DC转换器和电动机控件中。设计中的两个重要因素是热性能和开关特性。良好的热设计是解决方案的重要组成部分，因为它决定了设备的故障率和寿命。热考虑还会影响产品的包装和随之而来的机械结构，以及强制冷却的需求。通常需要散热器，并且通过PCB的热导率必须是最好的。
As for switching performance, GaN devices must be able to switch reliably with inductive components and paths. All switch-mode power supplies use multiple inductors for energy storage and are effective in that role. But the stress they place on the switching transistors is significant. Even the inductance of overly long PCB traces can cause problems. And this switching usually occurs at high current and voltage levels.
甘有身体二极管吗？
Virtually all silicon power MOSFETs have a body diode—a diode connected between the source and drain. GaN transistors do not. The internal structure is such that this diode doesn’t exist, nor does the attendant reverse-recovery charge. With no reverse-recovery losses, GaN devices switch faster.
然而，GAN晶体管确实在反向传导中表现出类似二极管的行为。这种二极管效应称为第三季度操作，可用于实现整流器。
Ti Gan产品
Texas Instruments拥有多功能的GAN Power产品系列。一个示例是LMG3410R070功率级，具有集成栅极驱动器的600-V晶体管。该设备具有超低输入和输出电容和零反向恢复。它在桥梁和半桥配置中效果很好。如上所述，没有身体二极管，没有反向发现损失。
Texas Instruments’ LMG341xR070 features a 600-V GaN transistor with 70-mΩ on-resistance. The internal gate driver has only 20-ns propagation delay and a 25- to 100-V/ns adjustable slew rate.
这figureshows the functional block diagram of the LMG341xR070 GaN device. The integrated gate driver simplifies its application. The device is also loaded with internal protection circuits like overcurrent protection (OCP), overtemperature protection (OTP), undervoltage lockout (UVLO), and transient overvoltage immunity. No external protective devices are needed. The device comes in an 8- × 8-mm QFN package and requires a 12-V power supply.
至于应用，该设备非常适合在广泛的电源，转换器，太阳能逆变器，UPS和电池充电器内。
一些类似但低压的IC也可用。这些是LMG5200和LMG1210半桥设备，它们都具有内部栅极驱动器。潜在的应用包括DC-DC转换器，D类音频放大器和电动机驱动程序。
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