与硅金属 - 氧化物 - 氧化物 - 氧化型晶体效应晶体管（MOSFET）或绝缘栅极双极晶体管（IGBTS）相比，甲氮化壳（GAN）宽带（WBG）半导体设备可实现更高的功率密度和效率。与WBG SIC设备相比，它们还具有许多应用程序的优势。基于GAN的组件可以在功率因子校正（PFC）拓扑中实现超过150 kHz的开关频率，并且在DC-DC功率转换器应用中超过1 MHz。
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Texas Instruments提供了一系列GAN FET，用于从消费电源适配器到电动车载充电器的应用。当以高于500 kHz的频率工作时，这些设备使您能够将磁性组件的尺寸降低到60％的尺寸，而不是其他设备。此外，TI的专有gan-on-silicon工艺产生了旨在确保高压系统安全的GAN设备。
Some specific applications for these components include telecom and server power supplies—they let you reach the 80 PLUS Titanium-level energy-efficiency standard, providing 96.5% total energy efficiency and more than 100-W/in.3功率密度。此外，TI GAN设备可以实现1.2 kW/L的功率密度，用于用于太阳能和能源存储应用中的双向AC-DC电源转换系统。
gan vs. SIC细节
In addition to outperforming MOSFETs and IGBTs, GaN devices also offer advantages compared with WBG silicon-carbide (SiC) devices.SIC设备可以比GAN获得更高的功率水平（图。1）并以高达1,200 V的电压运行，使其非常适合诸如机车牵引逆变器之类的应用。相比之下，GAN设备通常具有600V的评分 - 无论如何，它们可以以更高的频率切换并提供其他优势。
例如，在图腾孔单相PFC配置中（图2），GAN设备表现出零反向发现损失。相比之下，SIC设备的反向恢复电荷大于85 nc。
此外，GAN设备的开关能量比可比较的SIC版本低50％以上，导致PFC阶段更高。同样，包括集成的栅极驱动器在内的Ti的GAN设备可快速切换速度至150 v/ns，与SIC FET相比，与离散的GAN FET相比，损失降低了82％，损失降低了63％。
此外，与SIC和离散的GAN实现相比，Ti的GAN设备中高级驱动程序功能的可用性可将死时间损失的减少超过67％，而无需复杂的固件或硬件控制。
TI GaN devices also will find homes in three-phase PFC topologies. The 480-V ac line-to-line voltages and 900-V and higher dc bus voltages typical of such applications exceed the ratings of individual GaN devices. However, multilevel topologies allow TI GaN devices to serve some higher-voltage three-phase applications. In these cases, TI’s devices offer better thermal distribution as well as higher system densities and efficiencies when compared with SiC devices or IGBTs（请参阅表）。
GaN devices also offer cost advantages compared with SiC. Several cost factors, including those associated with packaging and test, will be similar across technologies and needn’t be considered in a high-level comparison. Factors that do change between GaN and SiC include costs associated with the substrate, with fabrication, and with the number of chips per wafer.
因为GaN设备标准低成本的增长silicon substrates, manufacturers are able to leverage their existing equipment. In contrast, SiC can yield more chips per wafer, but it requires a special and expensive high-temperature manufacturing process with temperatures exceeding 2,500°C. Texas Instruments estimates that a GaN device can cost 1.3 times that of a similarly rated superjunction MOSFET, while a comparable SiC device would cost 2.4 times that of the MOSFET.
Reliability
可靠性是任何半导体技术的关键考虑因素，而Power Gan行业已经投入了大量精力来加速可靠性开发。德州仪器achieved reliable GaN devices through a comprehensive in-house reliability program and an embrace of industry-wide GaN standards，例如由JEDEC的JC-70宽带电源电子转换半导体委员会颁布的。
该委员会发布了包括JEP173在内的GAN特定指南，描述了一种动态的抵抗测试方法；JEP180，涵盖开关可靠性评估程序；和JEP182，描述用于连续切换评估的测试方法。解决极端操作的其他相关标准包括IEC 61000-4-5，涵盖了激增的免疫力。
此外，根据AEC-Q100测试了用于汽车应用的Ti GAN零件。德州仪器还活跃于整个行业的文献发展，描述了gan失败机制及其加速度。
GAN特异性的可靠性工作之所以出现，是因为传统的硅资格方法无法完全解决GAN问题。例如，德州仪器的研究人员注意到，刚性切换的过渡可能会导致早期的甘纳设备过热。因此，他们开发了一种全面的方法来验证一系列应用程序的GAN可靠性。
As part of this approach, they developed the test vehicle shown in图3to exercise potential failure mechanisms. The test vehicle can be used to provide accelerated hard-switching stress testing in accordance with JEP182, and it’s able to measure dynamic on-resistance in accordance with JEP173. The researchers concluded that TI GaN devices remain robust in both hard-switching and soft-switching applications.
为了提高系统级可靠性，TI将过度过敏和过度电流保护以及电压锁定量集成到其GAN设备中。该公司使用低电感铅框来包装其GAN设备，以最大程度地减少振铃，从而进一步提高可靠性。
结论
GaN devices offer improved power density and energy efficiency in a range of applications, including consumer dc-dc converters, electric-vehicle onboard chargers, telecom and server power supplies, and bidirectional ac-dc power-conversion systems used in solar and energy-storage applications. Texas Instruments offers a portfolio of GaN devices with integrated gate drivers and protective functions to ensure lifetime reliability and lower system costs versus competing solutions.
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